Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-04-03
2008-05-13
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C257SE21546
Reexamination Certificate
active
07371654
ABSTRACT:
Forming of a first silicon oxide film is started on an internal surface of a trench formed on a surface or upwardly of a semiconductor substrate according to an HDP technique. Then, deposition of the first silicon oxide film stops before an opening of the trench closes. Further, the first silicon oxide film deposited in the vicinity of an opening is etched, and a second silicon oxide film is formed on the first silicon oxide film deposited on the bottom of the trench according to the HDP technique. In this manner, the first and second silicon oxide films can be laminated on the bottom of the trench.
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Hazama Hiroaki
Ichige Masayuki
Kaji Naruhiko
Mori Seiichi
Nishiyama Yukio
Kabushiki Kaisha Toshiba
Kebede Brook
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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