Fishing – trapping – and vermin destroying
Patent
1995-07-12
1996-11-26
Kunemund, Robert
Fishing, trapping, and vermin destroying
437241, H01L 21316, H01L 21318
Patent
active
055785301
ABSTRACT:
In a manufacturing method of semiconductor device having a fluorine-containing SiN layer, an SiN layer excellent in the step coverage can be formed using as raw material an Si compound containing at least both nitrogen and fluorine, by virtue of an intermediate product which, during the formation of the above SiN layer, is formed, liable to polymerization and has fluidity. Moreover, as the above Si compound contains fluorine that is taken into the formation of the fluorine-containing SiN layer whose dielectric constant is lowered thereby, delay in circuit operation due to parasitic capacitances can be reduced.
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Kito Hideyuki
Muroyama Masakazu
Kunemund Robert
Sony Corporation
Whipple M.
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