Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2011-01-11
2011-01-11
Louie, Wai-Sing (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S024000, C438S029000, C438S045000, C438S048000, C257SE31038
Reexamination Certificate
active
07867791
ABSTRACT:
The invention provides a technique to manufacture a highly reliable semiconductor device and a display device at high yield. As an exposure mask, an exposure mask provided with a diffraction grating pattern or an auxiliary pattern formed of a semi-transmissive film with a light intensity reducing function is used. With such an exposure mask, various light exposures can be more accurately controlled, which enables a resist to be processed into a more accurate shape. Therefore, when such a mask layer is used, the conductive film and the insulating film can be processed in the same step into different shapes in accordance with desired performances. As a result, thin film transistors with different characteristics, wires in different sizes and shapes, and the like can be manufactured without increasing the number of steps.
REFERENCES:
patent: 5589707 (1996-12-01), Cronin
patent: 6020598 (2000-02-01), Yamazaki
patent: 2002/0011597 (2002-01-01), Fujimoto et al.
patent: 2002/0013020 (2002-01-01), Kim et al.
patent: 2003/0020065 (2003-01-01), Honda
patent: 2002-203862 (2002-07-01), None
Ohnuma Hideto
Sakakura Masayuki
Fish & Richardson P.C.
Louie Wai-Sing
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Manufacturing method of semiconductor device using multiple... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing method of semiconductor device using multiple..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor device using multiple... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2623999