Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-10-15
1999-09-07
Utech, Benjamin
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438692, 438693, H01L 21302
Patent
active
059486988
ABSTRACT:
A method for fabricating a semiconductor device at low cost is provided in which a mask layer having a very large polishing selection ratio is used as a polishing stop film by forming the polishing stop film in self-alignment. An object layer to be flattened is formed on a substrate. The object layer contains an irregularity. A polishing stop film which is polished at a slower rate and a mask layer which is polished at about the same rate as the object layer are deposited on the object layer. Then, the mask layer on a high level portion of the object layer is removed by chemical-mechanical polishing. The polishing stop film is etched other than under the mask layer, so that the polishing stop film at the high level portion and side wall of the step is removed. Because the polishing stop film at the convex portions (high level portion) is removed by etching utilizing a chemical reaction without using chemical-mechanical polishing, it is possible to select a material for the polishing stop film which is polished at a very slow rate. After that, the mask layer and the object layer at the convex portion are removed by CMP to level off the object layer with the concave portion.
REFERENCES:
patent: 5753562 (1998-05-01), Kim
patent: 5792707 (1998-08-01), Chung
patent: 5804490 (1998-09-01), Fiegl et al.
Inohara Masahiro
Matsuno Tadashi
Chen Kin-Chan
Kabushiki Kaisha Toshiba
Utech Benjamin
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