Manufacturing method of semiconductor device, reticle...

Details Manufacturing method of semiconductor device, reticle... Manufacturing method of semiconductor device, reticle...

2007-03-13

2010-10-19

Young, Christopher G (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S022000, C430S030000, C430S312000

Reexamination Certificate

active

07816060

ABSTRACT:
A manufacturing method of a semiconductor device including a pattern forming method, a reticle correcting method, and a reticle pattern data correcting method are disclosed. According to one aspect of the present invention, there is provided a manufacturing method of a semiconductor device, comprising forming a pattern composed of photosensitive resin film including forming periodically arranged first contact hole patterns of a first photosensitive resin film on a processing film formed above a semiconductor substrate, and forming a selective opening pattern of a second photosensitive resin film including various opening pattern types on the first photosensitive resin film, whereby selectively forming second contact hole patterns at positions of the first contact hole patterns selected by the selective opening patterns, wherein the first contact hole patterns have corrected dimensions such that dimensions of the second contact hole patterns become equivalent each other independent of the opening pattern types.

REFERENCES:
patent: 6664011 (2003-12-01), Lin et al.
patent: 2005/0196684 (2005-09-01), Nakamura et al.
patent: 2005-275386 (2005-10-01), None
B.J. Lin, “Semiconductor Foundry, Lithography, and Patterns”, Proceedings of SPIE vol. 4688, pp. 11-24 (2002).
C. Chang, et al., “Low Proximity Contact Holes Formation by Using Double Exposure Technology (DET)”, Proceedings of SPIE vol. 5040, pp. 1241-1246 (2003).

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