Manufacturing method of semiconductor device including an...

Details Manufacturing method of semiconductor device including an... Manufacturing method of semiconductor device including an...

2005-09-27

2005-09-27

Nadav, Ori (Department: 2811)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S706000, C438S718000, C438S733000, C438S734000

Reexamination Certificate

active

06949437

ABSTRACT:
On a multilayer film which is formed on a semiconductor substrate, an opening which is opened on a base and an emitter is formed in the multilayer film, and after an SiGe/SiGeC film, which has a composition with a higher content of Si in an upper layer region and a lower layer region, and a higher content of Ge in an intermediate layer region, is formed on an entire surface, anisotropic dry etching is performed for the SiGe/SiGeC film up to a predetermined height of the opening.

REFERENCES:
patent: 6713790 (2004-03-01), Asai et al.

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