Manufacturing method of semiconductor device including...

Details Manufacturing method of semiconductor device including... Manufacturing method of semiconductor device including...

2011-08-09

2011-08-09

Thai, Luan C (Department: 2891)

Semiconductor device manufacturing: process

Having metal oxide or copper sulfide compound semiconductor...

C438S149000

Reexamination Certificate

active

07993964

ABSTRACT:
A manufacturing method of a semiconductor device includes forming an oxide semiconductor thin film layer of zinc oxide, wherein at least a portion of the oxide semiconductor thin film layer in an as-deposited state includes lattice planes having a preferred orientation along a direction perpendicular to the substrate and a lattice spacing d002of at least 2.619 Å.

REFERENCES:
patent: 6878962 (2005-04-01), Kawasaki et al.
patent: 7491575 (2009-02-01), Wu et al.
patent: 2002/0056838 (2002-05-01), Ogawa
patent: 2004/0127038 (2004-07-01), Carcia et al.
patent: 2004/0201022 (2004-10-01), Yamazaki et al.
patent: 2007/0093004 (2007-04-01), Park et al.
patent: 1 209 748 (2002-05-01), None
patent: 2005-150635 (2005-06-01), None
patent: 2006-005116 (2006-01-01), None
European Patent Office Communication dated Mar. 23, 2009 (in English) issued in counterpart European Application No. 07 744 628.4.
International Preliminary Report on Patentability dated Dec. 3, 2008 (in English), issued in counterpart International Application No. PCT/JP2007/061242.
International Search Report dated Aug. 29, 2007 (in English) issued in counterpart International Application No. PCT/JP2007/061242.
Korean Office Action dated Aug. 9, 2010 and English translation thereof, issued in counterpart Korean Application No. 10-2008-7009086.
Sun et al: “Changes of structure and optical energy gap induced by oxygen pressure during the deposition of ZnO films”: Physica B. Condensed Matter, Amsterdam, NL, vol. 381, No. 1-2; (May 31, 2006); pp. 109-112; XP005428873; ISSN: 0921-4526.
Hur Tae-Bong et al: “Strain effects in ZnO thin films and nanoparticles”; Journal of Applied Physics, American Institute of Physics, New York, vol. 99, No. 6; (Mar. 27, 2006); pp. 643081-643085; XP012084016; ISSN: 0021-8979.
Mahalingam et al: “Growth and characterization of electrosynthesised ZnO thin films”; Materials Research Bulletin, Elsevier, Kidlington GB, vol. 38, No. 2; (Jan. 25, 2003); pp. 269-277; XP004405329; ISSN: 0025-5408.
Lee et al: “Probing the work function of a gate metal with a top-gate ZnO-thin-film transistor with a polymer dielectric”; Applied Physics Letters; 88, 023504; (Jan. 11, 2006).
Y.E.Lee et al, Microstructural evolution and preferred orientation change of radio-frequency-magnetron sputtered ZnO thin films; Journal of Vacuum and Science of Technology Part A, vol. 14, May/Jun. 1996, pp. 1943-1948, 1996 American Vacuum Society.

Affiliated with

Also associated with

Rating

Manufacturing method of semiconductor device including... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of semiconductor device including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor device including... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2774722