Manufacturing method of semiconductor device having memory...

Details Manufacturing method of semiconductor device having memory... Manufacturing method of semiconductor device having memory...

2011-05-03

2011-05-03

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257SE21665

Reexamination Certificate

active

07935542

ABSTRACT:
To provide a manufacturing method of a semiconductor device capable of forming, as a protective film of an MTJ element, a silicon nitride film having good insulation properties without deteriorating the properties of the MTJ element. The method of the invention includes steps of forming a silicon nitride film over the entire surface including an MTJ element portion (MTJ element and an upper electrode) while using a parallel plate plasma CVD apparatus as a film forming apparatus and a film forming gas not containing NH3but composed of SiH4/N2/helium (He). The film forming temperature is set at from 200 to 350° C. More ideally, a flow rate ratio of He to SiH4is set at from 100 to 125.

REFERENCES:
patent: 5508067 (1996-04-01), Sato et al.
patent: 2004/0180529 (2004-09-01), Fukuhara et al.
patent: 2005/0280040 (2005-12-01), Kasko et al.
patent: 2007-305645 (2007-11-01), None

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