Manufacturing method of semiconductor device having CCD and peri

Details Manufacturing method of semiconductor device having CCD and peri Manufacturing method of semiconductor device having CCD and peri

1988-07-29

1989-08-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 26, 357 91, 357 42, 357 24, H01L 2996, H01L 2138

Patent

active

048596248

ABSTRACT:
In a method of manufacturing a semiconductor device which has a CCD and its peripheral circuit on the same substrate, a buried channel for a CCD and an impurity diffusion region for peripheral circuit transistors are formed at the same time by a single process, the impurity diffusion region being of the same conductivity type as that of the buried channel.

REFERENCES:
patent: 4024563 (1977-05-01), Tasch, Jr.
patent: 4047215 (1977-09-01), Frye et al.
patent: 4216574 (1980-08-01), Feist
patent: 4285000 (1981-08-01), Deyhimy et al.
patent: 4362575 (1982-12-01), Wallace
patent: 4584697 (1986-04-01), Hazendonk et al.
patent: 4603426 (1986-07-01), Sauer
patent: 4642877 (1987-02-01), Garner et al.
patent: 4667213 (1987-05-01), Kosonocky
R. Dawson et al., "A CMOS/Buried-n-Channel CCD Compatible Process for Analog Signal Processing Applications," RCA Review, vol. 38, 1977, pp. 406-635.

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