Manufacturing method of semiconductor device and...

Details Manufacturing method of semiconductor device and... Manufacturing method of semiconductor device and...

2006-01-10

2006-01-10

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S276000, C257S338000, C257S369000, C257S374000, C438S221000, C438S227000, C438S296000, C438S424000

Reexamination Certificate

active

06984855

ABSTRACT:
A semiconductor device comprising a buried insulating film formed in a substrate; a protective film formed on the buried insulating film covering corresponding diffusion regions of a P-type MISFET and a N-type MISFET, wherein the protective film is etch resistant to a hydrofluoric acid based solution; and a wiring layer formed on the protective film and being electrically connecting the diffusion regions of the P-type MISFET and the N-type MISFET.

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patent: 6411548 (2002-06-01), Sakui et al.
patent: 6506647 (2003-01-01), Kuroda et al.
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patent: 11-340456 (1999-10-01), None
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patent: 2003-037115 (2003-02-01), None

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