Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-04-06
2010-06-01
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C257SE21258
Reexamination Certificate
active
07727899
ABSTRACT:
A manufacturing method of a semiconductor device is carried out as follows. A first mask layer having a first linear opening pattern is formed above the first interlayer insulating layer. A second mask layer having a plurality of second linear opening patterns and first dummy opening patterns is formed above the first mask layer. The plurality of second linear opening patterns are aligned above the first linear opening pattern at given intervals to cross the first linear opening pattern. The first dummy opening patterns are arranged in close proximity to a first pattern remaining region that is present between the second linear opening patterns adjacent to each other. The first interlayer insulating layer that is present below opening patterns obtained by overlap portions of the first linear opening pattern and the second linear opening patterns is etched to form holes.
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Coleman W. David
Crawford Latanya
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
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