Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2007-05-08

2007-05-08

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

C438S612000, C257SE21007

Reexamination Certificate

active

11187981

ABSTRACT:
In the assembly of a semiconductor device, improvement in the reliability of flip chip bonding is aimed at. By forming a dummy terminal in the end portion of the row of a plurality of terminals for a flip chip in the package substrate, the flow of flux or solder can be suppressed with the dummy terminal, and a solder layer can be formed on the plurality of terminals for a flip chip. Thereby, the thickness of the solder layer formed on each terminal for a flip chip can fully be secured, without making solder adhere to the wire connection terminal closely formed to the terminal for a flip chip. As a result, improvement in the reliability of flip chip bonding can be aimed at.

REFERENCES:
patent: 2003/0139029 (2003-07-01), Haba et al.
patent: 2004/0067650 (2004-04-01), Dache et al.
patent: 2004/0238934 (2004-12-01), Warner et al.
patent: 5-327195 (1993-12-01), None

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