Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2006-06-13

2006-06-13

Tsai, H. Jey (Department: 2812)

Dentistry

Prosthodontics

Tooth construction

C438S382000, C438S383000

Reexamination Certificate

active

07059859

ABSTRACT:
In a semiconductor device having a MOS transistor and a diffused resistor layer, a leakage current of a diffused resistor layer is suppressed. A film of gate electrode material is formed over the entire surface of an N-type well, a photoresist layer is formed to mask a region to form a gate electrode and portions of the diffused resistor layer and the gate electrode and a damage prevention films are formed by anisotropically etching the film of gate electrode material. After forming a CVD insulation film over the entire surface of the N-type well, sidewall spacers are formed on sidewalls of the gate electrode and the damage prevention films by anisotropically etching the CVD insulation film. A source layer and a drain layer of the MOS transistor and contact regions to the diff-used resistor layer are formed by doping portions of the N-type well and the diffused resistor layer with high concentration P-type impurities using the gate electrode, the damage prevention film and the sidewall spacers as a mask.

REFERENCES:
patent: 5232865 (1993-08-01), Manning et al.
patent: 07-195093 (2000-12-01), None

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