Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2006-10-10

2006-10-10

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S749000

Reexamination Certificate

active

07119022

ABSTRACT:
In the manufacturing method of a GOLD structured TFT having a gate electrode of double-layered structure, in which, compared to a second layer gate electrode, the first layer gate electrode is thinner in film thickness and longer in dimension of the channel direction, by controlling the density of the photo-absorbent contained in a positive type resist such as diazonaphthoquinone (DNQ)-novolac resin series, the taper angle of the side wall is controlled to a desired angle range so that the angle thereof becomes smaller. Owing to this, it is possible to control the retreat amount of the resist when carrying out dry etching and the dimension of Lovarea to a desired dimensional range so that the dimension thereof becomes larger.

REFERENCES:
patent: 4692205 (1987-09-01), Sachdev et al.
patent: 5129991 (1992-07-01), Gilton
patent: 5506168 (1996-04-01), Morita et al.
patent: 6207247 (2001-03-01), Morita
patent: 6285433 (2001-09-01), Kawasaki
patent: 6432620 (2002-08-01), Arao
patent: 6497992 (2002-12-01), Yunogami et al.
Hatano, M. et al, “A Novel Self-Aligned Gate-Overlapped LDD Poly-Si TFT with High Reliability and Performance,” International Electron Devices Meeting, Washington DC, Dec. 7-10, 1997,IDEM Technical Digest, 97pp. 523-526, (1997).

Affiliated with

Also associated with

Rating

Manufacturing method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3657490