Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2006-09-05

2006-09-05

Pham, Thanhha (Department: 2813)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Making plural separate devices

C438S462000, C438S465000

Reexamination Certificate

active

07101735

ABSTRACT:
A first glass substrate is bonded through a resin to a top surface of a semiconductor wafer on which a first wiring is formed. A second glass substrate is bonded to a back surface of the semiconductor wafer through a resin. A V-shaped groove is formed by notching from a surface of the second glass substrate through a part of the first glass substrate. A second wiring connected with the first wiring and extending to the surface of the second glass substrate is formed. A protection film composed of an organic resin and a photoresist layer to provide the protection film with an opening are formed on the second wiring by spray coating. A conductive terminal is formed by screen printing using the protection film as a solder mask. A cushioning material may be formed on the second glass substrate by spray coating.

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Thomas Luxbacher, Ph.D., et al. (Jul. 1999) “Spray Coating for MEMS Interconnect & Advanced Packaging Applications,” Fujifilm Interface, 42ndInterface Microlithography Symposium, 5 pages.
A. Badihi (1999) “Shellcase Ultrathin Chip Size Package,” Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces, pp. 236-240.

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