Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-01-25
2005-01-25
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S243000, C438S246000, C438S248000, C438S259000, C438S424000, C438S426000, C438S429000, C438S430000, C438S439000
Reexamination Certificate
active
06846721
ABSTRACT:
A semiconductor device ensuring an isolation of elements by a trench is provided. A method of manufacturing the semiconductor device includes the step of forming a silicon nitride film having an aperture, the step of selectively removing a part of a silicon substrate along aperture to form a recess defined by a side surface and a bottom surface in silicon substrate, the step of oxidizing the side surface and the bottom surface of the recess to form a thermal oxide film having a side portion and a bottom portion, and the step of selectively removing bottom portion of thermal oxide film and a part of silicon substrate by using silicon nitride film as a mask to form a trench.
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Isaac Stanetta
McDermott & Will & Emery
Niebling John F.
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