Manufacturing method of semiconductor device

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material

Reexamination Certificate

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C438S243000, C438S246000, C438S248000, C438S259000, C438S424000, C438S426000, C438S429000, C438S430000, C438S439000

Reexamination Certificate

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06846721

ABSTRACT:
A semiconductor device ensuring an isolation of elements by a trench is provided. A method of manufacturing the semiconductor device includes the step of forming a silicon nitride film having an aperture, the step of selectively removing a part of a silicon substrate along aperture to form a recess defined by a side surface and a bottom surface in silicon substrate, the step of oxidizing the side surface and the bottom surface of the recess to form a thermal oxide film having a side portion and a bottom portion, and the step of selectively removing bottom portion of thermal oxide film and a part of silicon substrate by using silicon nitride film as a mask to form a trench.

REFERENCES:
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patent: 5721174 (1998-02-01), Peidous
patent: 5834360 (1998-11-01), Tesauro et al.
patent: 5972776 (1999-10-01), Bryant
patent: 6017800 (2000-01-01), Sayama et al.
patent: 6350655 (2002-02-01), Mizuo
patent: 6372606 (2002-04-01), Oh
patent: 11-26572 (1999-01-01), None

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