Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Using epitaxial lateral overgrowth
Patent
1998-04-21
1999-06-01
Brown, Peter Toby
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Using epitaxial lateral overgrowth
438320, 438348, 438363, 438365, 438481, 438655, 438657, 257518, 257588, H01L 21331
Patent
active
059096233
ABSTRACT:
A manufacturing method of the present invention comprises the first step of forming an epitaxial base layer in an opening of an element-isolating oxide film on a semiconductor substrate in a non-selection condition, the second step of growing a silicon oxide film on the epitaxial base layer and a base polysilicon layer, and the third step of etching the silicon oxide film to expose the polysilicon layer by the etch-back or the CMP. According to this method, the silicon oxide film is left only on the epitaxial base layer, and the planarization of the device can be attained. The present invention also reduces the resistance of the base electrode by providing silicide to the device.
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Brown Peter Toby
Kabushiki Kaisha Toshiba
Pham Long
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