Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2011-08-02

2011-08-02

Wagner, Jenny L. (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C257SE23173

Reexamination Certificate

active

07989317

ABSTRACT:
To provide a manufacturing method of a semiconductor device in which manufacturing cost can be reduced, and a manufacturing method of a semiconductor device with reduced manufacturing time and improved yield. A manufacturing method of a semiconductor device is provided, which includes the steps of forming a first layer containing a metal over a substrate, forming a second layer containing an inorganic material on the first layer, forming a third layer including a thin film transistor on the second layer, irradiating the first layer, the second layer, and the third layer with laser light to form an opening portion through at least the second layer and the third layer.

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