Manufacturing method of semiconductor device

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...

Reexamination Certificate

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C438S108000, C438S109000, C438S127000, C257SE23001, C257SE21499

Reexamination Certificate

active

08008123

ABSTRACT:
A manufacturing method of a semiconductor device, including a first step of forming a first electrode pad at an external edge part of a semiconductor chip mounting area of a supporting board; a second step of fixing a rear surface of a semiconductor chip having a main surface, the main surface where a second electrode pad is formed, to an inside of an area of the main surface of the supporting board, the area where the first electrode pad is formed; a third step of forming a first internal connecting terminal on the first electrode pad, and forming a second internal connecting terminal on the second electrode pad; and a fourth step of forming a first insulation layer on the main surface of the supporting board.

REFERENCES:
patent: 6348728 (2002-02-01), Aiba et al.
patent: 2006/0091561 (2006-05-01), Dangelmaier et al.
patent: 2008/0111233 (2008-05-01), Pendse
patent: 2009/0261466 (2009-10-01), Pagaila et al.
patent: 2001-217381 (2001-08-01), None
patent: 2001-298149 (2001-10-01), None

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