Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

1998-02-03

2000-02-01

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438742, H01L 21306

Patent

active

060202718

ABSTRACT:
A refractory metal layer is formed on the entire surface of an interlayer insulating film having a connection hole, and then etched back by using an etching gas containing at least one of Kr, Xe, and Rn, each of which is an inert gas element having a large atomic weight. A contact plug is formed by using a resulting refractory metal layer. By employing this manufacturing method, a refractory metal layer formed by the blanket CVD method can be etched while the loading effect is prevented during overetching, and a contact plug having a flat burying surface can be formed without causing any abnormal eroded portion in a connection hole of an interlayer insulating film.

REFERENCES:
patent: 5259923 (1993-11-01), Hori et al.
patent: 5294294 (1994-03-01), Namose
patent: 5391244 (1995-02-01), Kadomura
patent: 5409562 (1995-04-01), Kumihashi et al.

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