Manufacturing method of semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Reexamination Certificate

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C257S072000, C257SE21122, C438S455000

Reexamination Certificate

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07989811

ABSTRACT:
A manufacturing method of a highly reliable semiconductor with a waterproof property. The method includes the steps of: sequentially forming a peeling layer, an inorganic insulating layer, and an element formation layer including an organic compound layer, over a substrate; separating the peeling layer and the inorganic insulating layer from each other, or separating the substrate and the inorganic insulating layer from each other; removing a part of the inorganic insulating layer or a part of the inorganic insulating layer and the element formation layer, thereby isolating at least the inorganic insulating layer into a plurality of sections so that at least two layers among the organic compound layer, a flexible substrate, and an adhesive agent are stacked at outer edges of the isolated inorganic insulating layers; and cutting a region where at least two layers among the organic compound layer, the flexible substrate, and the adhesive agent are stacked.

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patent: 1453088 (2004-09-01), None
patent: 2005-229098 (2005-08-01), None
patent: WO 2006/011664 (2006-02-01), None

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