Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-08-02
2011-08-02
Kebede, Brook (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S072000, C257SE21122, C438S455000
Reexamination Certificate
active
07989811
ABSTRACT:
A manufacturing method of a highly reliable semiconductor with a waterproof property. The method includes the steps of: sequentially forming a peeling layer, an inorganic insulating layer, and an element formation layer including an organic compound layer, over a substrate; separating the peeling layer and the inorganic insulating layer from each other, or separating the substrate and the inorganic insulating layer from each other; removing a part of the inorganic insulating layer or a part of the inorganic insulating layer and the element formation layer, thereby isolating at least the inorganic insulating layer into a plurality of sections so that at least two layers among the organic compound layer, a flexible substrate, and an adhesive agent are stacked at outer edges of the isolated inorganic insulating layers; and cutting a region where at least two layers among the organic compound layer, the flexible substrate, and the adhesive agent are stacked.
REFERENCES:
patent: 5013681 (1991-05-01), Godbey et al.
patent: 5244830 (1993-09-01), Kang et al.
patent: 5757456 (1998-05-01), Yamazaki et al.
patent: 5821138 (1998-10-01), Yamazaki et al.
patent: 6118502 (2000-09-01), Yamazaki et al.
patent: 6376333 (2002-04-01), Yamazaki et al.
patent: 2004/0080262 (2004-04-01), Park et al.
patent: 2004/0164302 (2004-08-01), Arai et al.
patent: 2004/0232413 (2004-11-01), Yamazaki et al.
patent: 2005/0070038 (2005-03-01), Yamazaki et al.
patent: 2005/0094071 (2005-05-01), Akiyama et al.
patent: 2005/0130389 (2005-06-01), Yamazaki et al.
patent: 2005/0285231 (2005-12-01), Arao et al.
patent: 1453088 (2004-09-01), None
patent: 2005-229098 (2005-08-01), None
patent: WO 2006/011664 (2006-02-01), None
Fish & Richardson P.C.
Kebede Brook
Semiconductor Energy Laboratory Co,. Ltd.
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