Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2011-06-28

2011-06-28

Ngo, Ngan (Department: 2893)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C257SE29117

Reexamination Certificate

active

07968427

ABSTRACT:
The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a method for manufacturing a highly-reliable semiconductor device, which is not destructed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element layer having a semiconductor element formed using a non-single crystal semiconductor layer, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element layer and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are firmly fixed together.

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Search Report (Application No. 08003899.5) Dated Apr. 6, 2009.
Chinese Office Action (Application No. 200810086420.0) Dated Feb. 12, 2011.

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