Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2011-01-04

2011-01-04

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S121000, C438S125000, C438S597000, C257SE21499, C257SE21575

Reexamination Certificate

active

07863154

ABSTRACT:
A manufacturing method of a semiconductor device is provided, which includes a process in which a transistor is formed over a first substrate; a process in which a first insulating layer is formed over the transistor; a process in which a first conductive layer connected to a source or a drain of the transistor is formed; a process in which a second substrate provided with an second insulating layer is arranged so that the first insulating layer is attached to the second insulating layer; a process in which the second insulating layer is separated from the second substrate; and a process in which a third substrate provided with a second conductive layer which functions as an antenna is arranged so that the first conductive layer is electrically connected to the second conductive layer.

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