Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2011-07-19

2011-07-19

Sandvik, Benjamin P (Department: 2893)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S637000, C438S669000, C438S695000, C438S706000, C438S733000, C257S774000, C257SE21218, C257SE21221, C257SE21222

Reexamination Certificate

active

07981804

ABSTRACT:
A method of forming a metal interconnection that has a favorable cross-sectional shape is provided without the fear of side etching, even in a sparse arrangement of metal interconnections. The method, the following structure is employed. A region for placing a dummy metal interconnection is provided close to a region in which a metal interconnection is formed. A trench is formed in the dummy metal interconnection region and a resist pattern for the metal interconnection is then formed, giving the resist above the trench a large surface area per unit area. The metal interconnection is subsequently formed by dry etching in which an organic component from the resist above the trench forms a solid sidewall protection film, permitting anisotropic etching. The metal interconnection can thus have a favorable cross-sectional shape.

REFERENCES:
patent: 5578163 (1996-11-01), Yachi
patent: 2006/0261427 (2006-11-01), Dillon et al.
patent: 2007/0132105 (2007-06-01), Akram et al.
patent: 2007/0187362 (2007-08-01), Nakagawa et al.
patent: 2009/0085120 (2009-04-01), Lu et al.
patent: 63-250823 (1988-10-01), None
patent: 63250823 (1988-10-01), None
patent: 7-45590 (1995-02-01), None

Affiliated with

Also associated with

Rating

Manufacturing method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2682013