Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-06-07
2011-06-07
Quach, Tuan N. (Department: 2893)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S787000, C438S788000, C257SE21278
Reexamination Certificate
active
07955948
ABSTRACT:
A manufacturing method of a semiconductor device includes the steps of carrying a substrate in a processing chamber, bringing the processing chamber into a state at a first pressure by supplying a silicon compound gas which contains carbon and hydrogen into the processing chamber, forming a silicon oxide film on the substrate by irradiating a UV light to the silicon compound gas supplied into the processing chamber in the state kept at the first pressure, and decompression process to bring the processing chamber into a state at a second pressure lower than the first pressure. This makes it possible to form the dense silicon oxide film in the trench with high aspect ratio and small width.
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Japanese Office Action issued on Sep. 14, 2010, in counterpart Japanese Application No. 2009-172004 (8 pages, in Japanese, including complete English translation).
Japanese Office Action issued on Dec. 28, 2010, in counterpart Japanese Application No. 2009-172004 (5 pages, including complete English translation).
Ohashi Naofumi
Owada Nobuo
Taniguchi Takeshi
Wada Yuichi
Hitachi Kokusai Electric Inc.
Quach Tuan N.
Svihla Randall S.
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