Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2010-04-23

2011-10-18

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C438S106000, C257SE21237, C257SE21599, C257SE23040

Reexamination Certificate

active

08039364

ABSTRACT:
An adhesive layer of which thickness is over 25 μm and a dicing tape are laminated on a rear surface of a semiconductor wafer. The semiconductor wafer is cut together with a part of the adhesive layer by using a first blade of which cutting depth reaches the adhesive layer. The adhesive layer is cut together with a part of the dicing tape by using a second blade of which cutting depth reaches the dicing tape and of which width is narrower than the first blade. A semiconductor element sectioned by cutting the semiconductor wafer with the adhesive layer is picked up from the dicing tape, and is adhered on another semiconductor element or a circuit board.

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