Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2009-08-25

2011-11-01

Deo, Duy (Department: 1713)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S425000, C438S670000, C438S671000, C438S672000

Reexamination Certificate

active

08048762

ABSTRACT:
A manufacturing method for a semiconductor device includes: forming a first layer on a member to be etched; forming a first hard mask that includes a first hard mask pattern, in the first layer; forming a second layer on the first hard mask and on an exposed surface of the member to be etched; removing by selective etching the second layer to form a side wall core that includes a core pattern; forming side wall spacers on side walls of the side wall core; and using the side wall spacers and the first hard mask to remove by etching the member to be etched.

REFERENCES:
patent: 6063688 (2000-05-01), Doyle et al.
patent: 7531456 (2009-05-01), Kwon et al.
patent: 7615496 (2009-11-01), Lee et al.
patent: 7718540 (2010-05-01), Tran et al.
patent: 7816262 (2010-10-01), Juengling
patent: 7943481 (2011-05-01), Kim
patent: 2008-027978 (2008-02-01), None

Affiliated with

Also associated with

Rating

Manufacturing method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4276910