Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2005-02-28

2009-06-02

Young, Christopher G (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Registration or layout process other than color proofing

C430S030000, C430S311000, C430S312000, C430S328000, C430S394000

Reexamination Certificate

active

07541120

ABSTRACT:
After forming a resist film on a Si substrate, a circuit pattern for a semiconductor integrated circuit, a first L-shaped length measuring pattern and a cross-shaped monitor pattern for alignment are formed on the resist film. Next, based on these patterns, the Si substrate is patterned. Thereafter, a polysilicon film is formed above the Si substrate. Subsequently, a resist film is formed on the polysilicon film. Next, a circuit pattern for a semiconductor integrated circuit, a second L-shaped length measuring pattern and a cross-shaped monitor pattern for alignment are formed on the resist film. At this time, the second L-shaped length measuring pattern is made to face in a direction in which the first L-shaped length measuring pattern is rotated 180 degrees in plane view. By patterning the polysilicon film with these patterns as a mask, a gate electrode is formed.

REFERENCES:
patent: WO 96/04592 (1996-02-01), None
patent: WO00/49367 (2000-08-01), None
Patent Abstracts of Japan, Publication No. 2002122975 A, published on Apr. 26, 2002.
Patent Abstracts of Japan, Publication No. 2001209167 A, published on Aug. 3, 2001.
Patent Abstracts of Japan, Publication No. 62174914 A, published on Jul. 31, 1987.
Patent Abstracts of Japan, Publication No. 09245709 A, published on Sep. 19, 1977.
Patent Abstracts of Japan, Publication No. 2001085317 A, published on Mar. 30, 2001.

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