Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2006-06-19
2008-12-16
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S022000, C438S048000, C438S142000, C257SE27001
Reexamination Certificate
active
07465596
ABSTRACT:
To provide a semiconductor device including a thinned substrate with high yield. After forming a protective layer in a predetermined portion (at least a portion covering a side surface of a substrate) of the substrate, grinding and polishing of the substrate are performed. In other words, an element layer including a plurality of integrated circuits is formed over one surface of the substrate, the protective layer is formed in contact with at least the side surface of the substrate, and the substrate is thinned (for example, the other surface of the substrate is ground and polished), the protective layer is removed, and the polished substrate and the element layer is divided so as to form stack bodies including a layer provided with at least one of the plurality of integrated circuits.
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Kusumoto Naoto
Tsurume Takuya
Lindsay, Jr. Walter
Mustapha Abdulfattah
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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