Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2006-07-06

2008-12-16

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C438S487000, C438S795000, C219S121600, C219S121840

Reexamination Certificate

active

07466735

ABSTRACT:
When CW laser is irradiated on a semiconductor film while being relatively scanned in a fabrication process of a semiconductor device, many crystal grains extending in a scanning direction are formed. The semiconductor film irradiated in this way has characteristics substantially approximate to those of a single crystal in the scanning direction. However, because productivity and uniformity of laser annealing are low, mass-production is difficult. A plurality of laser beams is processed into linear beams and is allowed to possess mutually superposing portions to form a more elongated linear beam and to thus improve productivity. The linear beams the overlapping to one another have a positional relation satisfying a predetermined limitation formula, and uniformity of laser annealing can be remarkably improved.

REFERENCES:
patent: 4734550 (1988-03-01), Imamura et al.
patent: 4978970 (1990-12-01), Okazaki
patent: 5591668 (1997-01-01), Maegawa et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 6096581 (2000-08-01), Zhang et al.
patent: 6335509 (2002-01-01), Jung
patent: 6437284 (2002-08-01), Okamoto et al.
patent: 6509212 (2003-01-01), Zhang et al.
patent: 6535535 (2003-03-01), Yamazaki et al.
patent: 6563843 (2003-05-01), Tanaka
patent: 6570125 (2003-05-01), Suh et al.
patent: 6707614 (2004-03-01), Tanaka
patent: 6723590 (2004-04-01), Zhang et al.
patent: 6770546 (2004-08-01), Yamazaki
patent: 6979605 (2005-12-01), Yamazaki et al.
patent: 2002/0094008 (2002-07-01), Tanaka
patent: 2003/0024905 (2003-02-01), Tanaka
patent: 2003/0136772 (2003-07-01), Yamazaki et al.
patent: 2003/0148594 (2003-08-01), Yamazaki et al.
patent: 2003/0153182 (2003-08-01), Yamazaki et al.
patent: 2004/0161913 (2004-08-01), Kawasaki et al.
patent: 1 063 049 (2000-12-01), None
patent: 01-246819 (1989-10-01), None
patent: 03-286518 (1991-12-01), None
patent: 04-282869 (1992-10-01), None
patent: 05-315278 (1993-11-01), None
patent: 07-183540 (1995-07-01), None
patent: 07-249592 (1995-09-01), None
patent: 09-102468 (1997-04-01), None
patent: 2000-133593 (2000-05-01), None
patent: 2001-007045 (2001-01-01), None
Hara et al.,Ultra-high Performance Poly-Si TFTs on a Glass by a Stable Scanning CW Laser Lateral Crystallization, AM-LCD '01, Tech. Dig., 2001, pp. 227-230.

Affiliated with

Also associated with

Rating

Manufacturing method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4033060