Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2005-07-15

2008-08-26

Nguyen, Ha (Department: 2829)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Beam lead formation

C438S667000, C257S737000, C257S621000

Reexamination Certificate

active

07416963

ABSTRACT:
This invention offers a manufacturing method to reduce a manufacturing cost of a semiconductor device having a through-hole electrode by simplifying a manufacturing process and to enhance yield of the semiconductor device. A first insulation film is formed on a top surface of a semiconductor substrate. A part of the first insulation film is etched to form an opening in which a part of the semiconductor substrate is exposed. Then a pad electrode is formed in the opening and on the first insulation film. A second insulation film is formed on a back surface of the semiconductor substrate. Then a via hole having an aperture larger than the opening is formed. And a third insulation film is formed in the via hole and on the second insulation film. The third insulation film on a bottom of the via hole is etched to expose the pad electrode. After that, a through-hole electrode and a wiring layer are formed in the via hole. Finally, the semiconductor substrate is cut and separated into a plurality of semiconductor dice.

REFERENCES:
patent: 6844627 (2005-01-01), Lee et al.
patent: 2004/0137701 (2004-07-01), Takao
patent: 2004/0212086 (2004-10-01), Dotta et al.
patent: 2005/0009329 (2005-01-01), Tanida et al.
patent: 1482655 (2004-03-01), None
patent: 2003-309221 (2003-10-01), None

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