Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having a perfecting coating
Reexamination Certificate
2005-01-14
2008-07-15
Everhart, Caridad M (Department: 2891)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having a perfecting coating
C438S114000, C438S461000, C257SE21599, C257SE21606
Reexamination Certificate
active
07399683
ABSTRACT:
A manufacturing method of a semiconductor device of this invention includes forming metal pads on a Si substrate through a first oxide film, bonding the Si substrate and a holding substrate which bolsters the Si substrate through a bonding film, forming an opening by etching the Si substrate followed by forming a second oxide film on a back surface of the Si substrate and in the opening, forming a wiring connected to the metal pads after etching the second oxide film, forming a conductive terminal on the wiring, dicing from the back surface of the Si substrate to the bonding film and separating the Si substrate and the holding substrate.
REFERENCES:
patent: 5229647 (1993-07-01), Gnadinger
patent: 5350662 (1994-09-01), Chi
patent: 5691245 (1997-11-01), Bakhit
patent: 5927993 (1999-07-01), Lesk et al.
patent: 6027958 (2000-02-01), Vu
patent: 6042922 (2000-03-01), Senoo et al.
patent: 6110825 (2000-08-01), Mastromatteo et al.
patent: 6136668 (2000-10-01), Tamaki et al.
patent: 6506681 (2003-01-01), Grigg et al.
patent: 6597059 (2003-07-01), McCann et al.
patent: 6649931 (2003-11-01), Honma et al.
patent: 6781244 (2004-08-01), Prabhu
patent: 6864172 (2005-03-01), Noma et al.
patent: 2001/0005043 (2001-06-01), Nakanishi
patent: 2004/0229405 (2004-11-01), Prabhu
patent: 2007/0166957 (2007-07-01), Kambyama
patent: 1-041-617 (2000-10-01), None
patent: 6-2101678 (1987-05-01), None
patent: 3-152942 (1991-06-01), None
patent: 05287082 (1993-11-01), None
patent: 10-242084 (1998-09-01), None
patent: 11-307624 (1999-11-01), None
patent: 2000-183025 (2000-06-01), None
patent: 2001-068618 (2001-03-01), None
patent: 2001-185519 (2001-07-01), None
patent: 2001-210667 (2001-08-01), None
patent: 2002-083785 (2002-03-01), None
patent: 5-512436 (2002-04-01), None
patent: 2002-270676 (2002-09-01), None
patent: 2005-191550 (2005-07-01), None
patent: WO-99/36958 (1999-07-01), None
patent: WO-99/40624 (1999-08-01), None
European Office Action dated Sep. 20, 2004.
European Office Action dated Sep. 26, 2005.
Noma Takashi
Shinogi Hiroyuki
Takao Yukihiro
Everhart Caridad M
Morrison & Foerster / LLP
Sanyo Electric Co,. Ltd.
LandOfFree
Manufacturing method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3968373