Manufacturing method of semiconductor device

Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having a perfecting coating

Reexamination Certificate

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Details

C438S114000, C438S461000, C257SE21599, C257SE21606

Reexamination Certificate

active

07399683

ABSTRACT:
A manufacturing method of a semiconductor device of this invention includes forming metal pads on a Si substrate through a first oxide film, bonding the Si substrate and a holding substrate which bolsters the Si substrate through a bonding film, forming an opening by etching the Si substrate followed by forming a second oxide film on a back surface of the Si substrate and in the opening, forming a wiring connected to the metal pads after etching the second oxide film, forming a conductive terminal on the wiring, dicing from the back surface of the Si substrate to the bonding film and separating the Si substrate and the holding substrate.

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