Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2007-02-27

2007-02-27

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S381000, C438S387000, C438S396000, C257SE21004, C257SE21575

Reexamination Certificate

active

10998804

ABSTRACT:
After an upper electrode protective film is formed such that it is in a firm contact with ruthenium film of the upper electrode without damaging the ruthenium film, the upper electrode is etched, thereby, a MIM capacitor is obtained in which leak current is not increased due to oxidation of the ruthenium film of the upper electrode.

REFERENCES:
patent: 6399399 (2002-06-01), Yamamoto
patent: 2003/0036243 (2003-02-01), Hironaka et al.
patent: 11-026722 (1999-01-01), None
patent: 2001-144266 (2001-05-01), None
patent: 2001-313379 (2001-11-01), None

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