Manufacturing method of semiconducter device

Details Manufacturing method of semiconducter device Manufacturing method of semiconducter device

2006-07-18

2006-07-18

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S249000, C438S396000, C438S253000, C438S240000, C257SE21001

Reexamination Certificate

active

07078242

ABSTRACT:
An IrOxfilm is formed as a first conductive oxide film on a PLZT film by a reactive sputtering method. Thereafter, thermal treatment by, for example, RTA is performed in an atmosphere containing oxygen having partial pressure of less than 5% of atmospheric pressure. As a result, crystallization of the PLZT film is promoted, and annealing treatment is performed for the IrOxfilm. Thereafter, furnace annealing at 600° C. or higher, for example, 650° C. is performed for 60 minutes in, for example, an O2atmosphere as recovering annealing to recover oxygen deficiency in the PLZT film. Subsequently, an IrO2film is formed as a second conductive oxide film on the IrOxfilm by a sputtering method.

REFERENCES:
patent: 6258608 (2001-07-01), Jung
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patent: 6500678 (2002-12-01), Aggarwal et al.
patent: 6649954 (2003-11-01), Cross
Patent Abstracts of Japan, Publication No. 2002324894, dated Nov. 8, 2002.
Patent Abstracts of Japan, Publication No. 2002246564, dated Aug. 30, 2002.

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