Manufacturing method of Schottky gate FET

Details Manufacturing method of Schottky gate FET Manufacturing method of Schottky gate FET

1984-06-07

1986-02-11

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 29579, 148 15, 148187, 357 91, H01L 21265, H01L 2124

Patent

active

045691193

ABSTRACT:
An etched SiO.sub.2 film component serving as a mask at the time of formation of source and drain electrodes in a surface layer of a GaAs substrate by means of ion implantation is side-etched before a gate electrode is formed. An SiO.sub.2 film component has a narrowed width smaller than a distance between the source and drain electrodes while the SiO.sub.2 film component supports a metal mask patterned film at its top surface. The SiO.sub.2 film component is replaced with a metal layer serving as a gate of a self-aligned Schottky gate FET. According to this method, a metal with high heat resistance need not be used as a metal material of the gate layer.

REFERENCES:
patent: 4344980 (1982-08-01), Yoder
patent: 4351099 (1982-09-01), Takagi
patent: 4403396 (1983-09-01), Stein
patent: 4472872 (1984-09-01), Toyoda et al.
patent: 4481704 (1984-11-01), Darley et al.
Alcorn et al., IBM--TDB, 20 (1978) 4009.
Bergeron, IBM--TDB, 21 (1978) 1371.
Matsumoto et al., Jap. Jour. Appl. Phys. 21 (1982) L-445-446.

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