Semiconductor device manufacturing: process – Making passive device – Resistor
Patent
1997-10-28
1999-08-10
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making passive device
Resistor
438659, H01L 218244
Patent
active
059373059
ABSTRACT:
A polysilicon load structure and its manufacturing method for static random access memory, comprising the steps of first providing a semiconductor substrate, and then forming a first insulating layer over the substrate. Next, a trench is etched out from the insulating layer forming a step structure. Thereafter, a polysilicon layer is formed over the first insulating layer, and then a global ion implantation operation is performed. Next, a photoresist layer is formed over the polysilicon layer, and then a connector pattern is defined using a microlithographic process. Thereafter, the polysilicon layer is anisotropically etched to form a spacer on the sidewall of the trench. Subsequently, a second ion implantation is performed to adjust the resistance of the connector. Finally, microlithographic and etching processes are used to remove the unwanted portions of the polysilicon spacer and exposing the polysilicon spacer structure and the polysilicon connector structure.
REFERENCES:
patent: 5200356 (1993-04-01), Tanaka
patent: 5275963 (1994-01-01), Cederbaum et al.
patent: 5330930 (1994-07-01), Chi
patent: 5348901 (1994-09-01), Chen et al.
patent: 5470779 (1995-11-01), Yoo
Chaudhari Chandra
Winbond Electronics Corp.
LandOfFree
Manufacturing method of polysilicon load for static random acces does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing method of polysilicon load for static random acces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of polysilicon load for static random acces will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1130239