Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-08-29
2006-08-29
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S149000, C257S072000
Reexamination Certificate
active
07098062
ABSTRACT:
A method of fabricating a pixel structure of TFT LCD is provided. First, a gate pattern, pixel electrode pattern, gate isolating layer and semiconductor layer are formed over the substrate sequentially. Then, a patterning process is performed to remove the first metal layer over the pixel electrode pattern, wherein the gate isolating layer and semiconductor layer are retained over the gate pattern. Next, a source pattern and drain pattern are sequentially formed over the substrate, and then a passivation layer and photoresist layer are formed over the substrate. Thereafter, a back side exposure process and a patterning process are performed by using the gate pattern, source pattern and drain pattern as mask to pattern the photoresist layer. Thereafter, the passivation layer is etched by using the patterned photoresist layer as mask to expose the transparent conductive layer of the pixel electrode pattern. Finally, the photoresist layer is removed.
REFERENCES:
patent: 6999152 (2006-02-01), Park et al.
patent: 7005331 (2006-02-01), Chen
Jiang Chyun IP Office
Le Thao P.
Quanta Display Inc.
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