Manufacturing method of pixel structure

Details Manufacturing method of pixel structure Manufacturing method of pixel structure

2010-02-05

2010-12-28

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C257SE27111, C257S072000, C257S059000, C257S057000

Reexamination Certificate

active

07858413

ABSTRACT:
A method of manufacturing the pixel structure is provided. The method includes forming a gate, a scan line connected to the gate, and at least one auxiliary pattern on a substrate. An insulating layer, a semiconductor layer, an ohmic contact layer, and a photoresist layer are formed in sequence. Afterwards, a single exposure and development is performed on the photoresist layer to form a first portion and a second portion. Next, the ohmic contact layer and the semiconductor layer which are not covered by the photoresist layer are removed to expose a part of the insulating layer. Next, the second portion of the photoresist layer is removed. Subsequently, a part of the thickness of the semiconductor layer not covered by the first portion is removed and the exposed insulating layer is removed, so as to form a channel layer and an insulating layer.

REFERENCES:
patent: 6853405 (2005-02-01), Lee
patent: 6906776 (2005-06-01), Park et al.
patent: 2003/0076452 (2003-04-01), Kim et al.
patent: 2006/0003479 (2006-01-01), Park et al.

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