Manufacturing method of p-type semiconductor crystal

Details Manufacturing method of p-type semiconductor crystal Manufacturing method of p-type semiconductor crystal

1995-11-28

1998-05-19

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117107, 438918, C30B 1514

Patent

active

057530394

ABSTRACT:
An object formed of a semiconductor is heated to and kept at such a temperature that a semiconductor crystal formed of a II-VI Group compound semiconductor mainly containing Zn and Se can be grown. A molecular beam including elements constituting the II-VI Group compound semiconductor mainly containing Zn and Se is irradiated onto the heated object, and a gas beam composed of a nitrogen molecule being in a ground electronic state and having a gas pressure of not less than 3.times.10.sup.-5 Torr, to form a p-type semiconductor crystal on the object.

REFERENCES:
patent: 4904618 (1990-02-01), Neumark
patent: 5468678 (1995-11-01), Nakamura et al.
patent: 5616778 (1997-04-01), Toda et al.
Journal of Crystal Growth 111 (1991) 797-801.
J. Appl. Phys. 58 (2), 15 Jul. 1985.
Doping of Nitrogen Acceptors into ZnSe Using a Radical Beam During MBE Growth, K. Ohkawa et al., Journal of Crystal Growth III (1991).

Affiliated with

Also associated with

Rating

Manufacturing method of p-type semiconductor crystal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of p-type semiconductor crystal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of p-type semiconductor crystal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1849237