Manufacturing method of optical semiconductor integrated...

Details Manufacturing method of optical semiconductor integrated... Manufacturing method of optical semiconductor integrated...

2007-06-26

2007-06-26

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S072000

Reexamination Certificate

active

10949707

ABSTRACT:
In an existing optical semiconductor integrated circuit device, a multi-layered wiring layer is formed on a top surface of a substrate. Therefore, a film thickness of an insulating layer on a top surface of a photodiode could be uniformed with difficulty. Thus there was a problem in the constitution of the insulating layer wherein light incidence was caused to fluctuate, and thereby a desired sensitivity to light could not be obtained. In an optical semiconductor integrated circuit device according to the present invention, after a multi-layered wiring layer is formed on a top surface of a substrate, an insulating layer on a top surface of an anti-reflection film of a photodiode is dry-etched to remove. At this time, a barrier metal layer is used as an etching stopper film. Thereby, in the invention, a manufacturing process can be simplified and owing to adoption of the dry etching miniaturization can be realized. Furthermore, since the anti-reflection film is exposed from the insulating layer, fluctuation of incident light can be suppressed and the sensitivity to light can be improved.

REFERENCES:
patent: 6433366 (2002-08-01), Takimoto et al.
patent: 6846694 (2005-01-01), Natsuaki et al.
patent: 3-206671 (1991-09-01), None
patent: 2001-320078 (2001-11-01), None
patent: 2003-224253 (2003-08-01), None

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