Manufacturing method of non-volatile semiconductor memory device

Details Manufacturing method of non-volatile semiconductor memory device Manufacturing method of non-volatile semiconductor memory device

1994-11-25

1996-02-13

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 44, 437149, 437158, H01L 218247

Patent

active

054911010

ABSTRACT:
The invention provides a process to form on a certain conductive type semiconductor substrate 1 insulation layer 9 having openings 11, which regions will become source and drain; a process to form diffusion layer 8 of the same conductive type as semiconductor substrate 1 in to-be-drain space, with insulation layer 9 and photoresist 10 as masks; a process to form side wall layer 13 alongside openings of insulation layer 9; a process to form diffusion layers 4 and 5, conductive type of which layers is opposite to that of semiconductor substrate 1, in to-be-source and to-be-drain regions, with insulation layer 9 and side wall layer 13 as masks; a process to remove insulation layer 9 and side wall layer 13; and a process to form insulation layer 2 on semiconductor substrate in channel region distinguished by, and including part of, diffusion layers 4 and 5, and to form floating-gate electrode 3 on insulation layer 2, and control-gate electrode 7 with insulation layer 6 in between. The manufacturing method according to this invention forms drain and high density P-type diffusion layer by making use of side wall layer. Therefore, this makes it possible to shape DSA structure controlling the distance from drain to high density P-type diffusion layer with high accuracy, without using high temperature diffusion process. This means that this invention offers an easy way to make DSA structure with finer design rules.

REFERENCES:
patent: 4514897 (1985-05-01), Chiu et al.
patent: 5147811 (1992-09-01), Sakagami
patent: 5264384 (1993-11-01), Kaya et al.

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