Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Reexamination Certificate
2008-07-14
2010-10-05
Bryant, Kiesha R (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
C438S700000, C257SE21220
Reexamination Certificate
active
07807490
ABSTRACT:
Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.
REFERENCES:
patent: 6335546 (2002-01-01), Tsuda et al.
patent: 6566231 (2003-05-01), Ogawa et al.
patent: 6576533 (2003-06-01), Tomiya et al.
patent: 6627552 (2003-09-01), Nishio et al.
patent: 7109049 (2006-09-01), Takakura et al.
patent: 7157297 (2007-01-01), Kamikawa et al.
patent: 2001/0029086 (2001-10-01), Ogawa et al.
patent: 2002/0030200 (2002-03-01), Yamaguchi et al.
patent: 2002/0115267 (2002-08-01), Tomiya et al.
patent: 2003/0132441 (2003-07-01), Takatani et al.
patent: 2003/0141507 (2003-07-01), Krames et al.
patent: 2003/0145783 (2003-08-01), Motoki et al.
patent: 2003/0197166 (2003-10-01), Ishida et al.
patent: 2004/0089919 (2004-05-01), Motoki et al.
patent: 2004/0245540 (2004-12-01), Hata et al.
patent: 2005/0025204 (2005-02-01), Kamikawa et al.
patent: 2005/0025205 (2005-02-01), Ryowa et al.
patent: 2005/0042787 (2005-02-01), Ito et al.
patent: 2005/0139857 (2005-06-01), Shin
patent: 2005/0141577 (2005-06-01), Ueta et al.
patent: 2005/0151153 (2005-07-01), Kamikawa et al.
patent: 2005/0221515 (2005-10-01), Yanashima et al.
patent: 2006/0038166 (2006-02-01), Tsuda et al.
patent: 2007/0051961 (2007-03-01), Kamikawa et al.
patent: 2003-017808 (2003-01-01), None
patent: 2003-124573 (2003-04-01), None
patent: 2003-179311 (2003-06-01), None
patent: 2004-000328 (2004-01-01), None
patent: 2004-356454 (2004-12-01), None
patent: 2005-236109 (2005-09-01), None
patent: WO 03/038957 (2003-05-01), None
Chinese Office Action, with partial English translation, issued in Chinese Patent Application No. CN 2005100084737, mailed Dec. 7, 2007.
Japanese Office Action, with English translation and Verification of English translation, issued in Japanese Patent Application No. 2006-078726, mailed Feb. 23, 2010.
Japanese Office Action, with English translation and Verification of English translation, issued in Japanese Patent Application No. 2004-105135, mailed Feb. 23, 2010.
Hata Masayuki
Izu Hiroaki
Kano Takashi
Nomura Yasuhiko
Yamaguchi Tsutomu
Anya Igwe U
Bryant Kiesha R
McDermott Will & Emery LLP
Sanyo Electric Co,. Ltd.
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