Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2008-07-29
2008-07-29
Baumeister, Bradley W. (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S047000, C257S615000, C257SE21220
Reexamination Certificate
active
07405096
ABSTRACT:
Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.
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Chinese Office Action, with partial English translation, issued in Chinese Patent Application No. CN, 2005100084737, mailed Dec. 7, 2007.
Hata Masayuki
Izu Hiroaki
Kano Takashi
Nomura Yasuhiko
Yamaguchi Tsutomu
Anya Igwe U.
Baumeister Bradley W.
McDermott Will & Emery LLP
Sanyo Electric Co,. Ltd.
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