Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2008-04-30
2009-12-15
Tran, Minh-Loan T (Department: 2826)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C257SE33074
Reexamination Certificate
active
07632693
ABSTRACT:
A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.
REFERENCES:
patent: 2005/0212002 (2005-09-01), Sanga et al.
Chien Fen-Ren
Huang Cheng-Kuo
Li Yun-Li
Pan Shyi-Ming
Tseng Huan-Che
Ahmed Selim
Formosa Epitaxy Incorporation
Rosenberg , Klein & Lee
Tran Minh-Loan T
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