Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-07-12
2011-07-12
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
Reexamination Certificate
active
07977142
ABSTRACT:
A method of manufacturing an image sensor having a minimized spatial distance between microlenses to improve integration, and thus, enhance the ability of each microlens to condense light incident.
REFERENCES:
patent: 4553153 (1985-11-01), McColgin et al.
patent: 6014232 (2000-01-01), Clarke
patent: 6297071 (2001-10-01), Wake
patent: 7547573 (2009-06-01), Wen et al.
patent: 2004/0082096 (2004-04-01), Yamamoto
patent: 1200828 (1998-12-01), None
patent: 1258428 (2000-06-01), None
patent: 1385715 (2002-12-01), None
patent: 1505163 (2004-06-01), None
patent: 10-2003-0039712 (2003-05-01), None
Viana, C.E. “TEOS Silicon Oxides Deposition to Low Temperature Applications” Abs. 1005, 206th Meeting, 2004 The Electrochemical Society pp. 1.
Dongbu Hi-Tek Co., Ltd.
Richards N Drew
Sherr & Vaughn, PLLC
Withers Grant S
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