Etching a substrate: processes – Forming or treating thermal ink jet article
Reexamination Certificate
2011-06-07
2011-06-07
Alanko, Anita K (Department: 1713)
Etching a substrate: processes
Forming or treating thermal ink jet article
C029S025350, C029S890100, C438S021000
Reexamination Certificate
active
07955509
ABSTRACT:
There is disclosed a manufacturing method in which depths of individual liquid chambers can be set to be small. The manufacturing method is a manufacturing method of a liquid discharge head having a liquid chamber which communicates with a discharge port for discharging a liquid, and includes: etching a first Si layer of an SOI substrate by use of an insulating layer as an etching stop layer to form the liquid chamber at the first Si layer, the SOI substrate being constituted by the first Si layer, the insulating layer and a second Si layer in this order; and removing a part or all of the second Si layer.
REFERENCES:
patent: 5513431 (1996-05-01), Ohno et al.
patent: 6378996 (2002-04-01), Shimada et al.
patent: 6912759 (2005-07-01), Izadnegahdar et al.
patent: 7571991 (2009-08-01), Sugimoto
patent: 2005/0001883 (2005-01-01), Shin et al.
patent: 2007/0019033 (2007-01-01), Sim et al.
patent: 2008/0165228 (2008-07-01), Kang et al.
patent: 2009/0020504 (2009-01-01), Yoo et al.
patent: 2010/0167433 (2010-07-01), Lee et al.
patent: 5-229128 (1993-09-01), None
patent: 11-227204 (1999-08-01), None
patent: 2001-205808 (2001-07-01), None
Alanko Anita K
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
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