Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Reexamination Certificate
2011-08-16
2011-08-16
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
C438S042000, C438S047000, C257SE33005, C257SE33006, C257SE33011
Reexamination Certificate
active
07998771
ABSTRACT:
Provided is a method of manufacturing a light emitting diode using a nitride semiconductor, which including the steps of: forming n- and p-type current spreading layers using a hetero-junction structure; forming trenches by dry-etching the n- and p-type current spreading layers; forming an n-type metal electrode layer in the trench of the n-type current spreading layer; forming a p-type metal electrode layer in the trench of the p-type current spreading layer; and forming a transparent electrode layer on the p-type metal electrode layer, thereby improving current spreading characteristics as compared with the conventional method of manufacturing the light emitting diode, and enhancing operating characteristics of the light emitting diode.
REFERENCES:
patent: 5739553 (1998-04-01), Noto et al.
patent: 6037603 (2000-03-01), Nelson
patent: 6936858 (2005-08-01), Nakatsu et al.
patent: 2004/0041164 (2004-03-01), Thibeault et al.
patent: 2004/0084684 (2004-05-01), Tarsa et al.
patent: 2004/0227142 (2004-11-01), Izumiya
patent: 2005/0211994 (2005-09-01), Erchak
patent: 2006/0192207 (2006-08-01), Wook Shim et al.
patent: 2007/0181894 (2007-08-01), Stein et al.
patent: 2002-016312 (2002-01-01), None
patent: 2005-019653 (2005-01-01), None
patent: 2005-276899 (2005-10-01), None
patent: 2005-0068807 (2005-07-01), None
patent: 2006-0053469 (2006-05-01), None
patent: 100610639 (2006-08-01), None
patent: 2006-0104162 (2006-10-01), None
Kim K. H. et al., “III-nitride ultraviolet light-emitting diodes with delta doping”, Applied Physics Letters, Jul. 21, 2003, vol. 83, No. 3, pp. 566-568.
Electronics and Telecommunications Research Institute
Lee Hsien-Ming
Parendo Kevin
Rabin & Berdo P.C.
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