Manufacturing method of light-emitting diode

Details Manufacturing method of light-emitting diode Manufacturing method of light-emitting diode

1996-12-30

1999-06-01

Niebling, John

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Dopant introduction into semiconductor region

542960, H01L 21228, H01L 3300

Patent

active

059083034

ABSTRACT:
A manufacturing method of a light-emitting diode is provided. The light-emitting diode manufactured by the steps of coating solution containing p-type or n-type impurities on a porous silicon layer, thereby forming a p
junction through a thermal treatment has excellent light-emitting efficiency. Also, the process is simple compared to an implantation method, and further the manufacturing is since the thermal treatment can be performed at a relatively low temperature.

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