Manufacturing method of light emitting device

Details Manufacturing method of light emitting device Manufacturing method of light emitting device

2011-01-25

2011-01-25

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S022000, C438S045000

Reissue Patent

active

RE042074

ABSTRACT:
A method of manufacturing a light emitting device, including the steps of: forming an active layer composed of a compound semiconductor containing indium by a vapor phase growth method; and forming a cap layer composed of a compound semiconductor on said active layer by a vapor phase growth method at a growth temperature approximately equal to or lower than a growth temperature for said active layer.

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