Manufacturing method of light emitting device

Details Manufacturing method of light emitting device Manufacturing method of light emitting device

1999-10-27

2000-12-19

Pham, Long

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 22, 438 45, H01L 2100

Patent

active

061626562

ABSTRACT:
A method of manufacturing a light emitting device, including the steps of: forming an active layer composed of a compound semiconductor containing indium by a vapor phase growth method; and forming a cap layer composed of a compound semiconductor on said active layer by a vapor phase growth method at a growth temperature approximately equal to or lower than a growth temperature for said active layer.

REFERENCES:
patent: 5345463 (1994-09-01), Mannoh et al.
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5495115 (1996-02-01), Kudo et al.
patent: 5563422 (1996-10-01), Nakamura et al.
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5583878 (1996-12-01), Shimizu et al.
patent: 5592501 (1997-01-01), Edmond et al.
patent: 5656832 (1997-08-01), Ohba et al.
patent: 5777350 (1998-07-01), Nakamura et al.
patent: 5866440 (1999-02-01), Hata
patent: 5990496 (1999-11-01), Kunisato et al.
Nakamura S. et al. "Superbright green InGaN single-quantum-well-structure LEDs" Japanese Journal Of Applied Physics, Part 2 (Letters), Oct. 15, 1995, Japan, vol. 34, No. 10B, pp. L1332-L1335, XP000702227.
Nakamura S: "III-V nitride-based LEDs" Conf. On Diamond, Diamond-Like And Related Materials, Barcelona, Sep. 10-15, 1995, vol. 5, No. 3-5, pp. 496-500, XP000627554.
Compound Semiconductor, p. 7--Jan./Feb. 1996.
Shuji Nakamura et al.; Appl. Phys. Lett. 69 (10), pp. 1477-1479; Sep. 2, 1996.
Shuji Nakamura et al.; Jpn. J. Appl. Phys. vol. 35, pp. L74-L76, Part. 1, No. 1B; Jan. 15, 1996.
Shuji Nakamura et al.; Jpn. J. Appl. Phys. vol. 35, pp. L217-220, Part. 2, No. 2B; Feb. 15, 1996.

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